Berlin 2018 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 3: Oxide Semiconductors for Novel Devices (Focussed Session): Session I

DS 3.13: Vortrag

Montag, 12. März 2018, 12:45–13:00, E 020

Room temperature fabricated all-oxide junction field-effect transistors and inverters on rigid and flexible substrates — •Peter Schlupp, Sofie Vogt, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, Leipzig, Germany

Room temperature (RT) fabrication of electronic devices saves energy within the fabrication process and enables the usage of thermally unstable but flexible substrates. One material class that can be fabricated at RT showing promising properties are amorphous (or nanocrystalline) oxide semiconductors (AOS). The most commonly used n-type AOS is indium gallium zinc oxide which is already successfully used as channel material in pixel drivers for active matrix displays [1]. However, because indium is rare and expensive we use n-type zinc tin oxide (ZTO) as channel layer material which shows easily controllable electrical properties [2,3].

We present junction field-effect transistors (JFETs) using p-type amorphous zinc cobalt oxide and nanocrystalline nickel oxide as gate diodes. The ZTO films were grown by magnetron sputtering on glass and flexible polyimide while the p-type layers were grown by pulsed laser deposition. The characteristics of the JFETs and inverters based on them fabricated on both substrates will be discussed. Additionally, their changes after bending the flexible samples will be presented.

[1] Wellenius et al.: J. Display Technol. 5, 438 (2009)

[2] Jayaraj et al.: J. Vac. Sci. Technol. B, 26(2), 495 (2008)

[3] Schlupp et al.: MRS Proceedings 1633, 101 (2014)