Berlin 2018 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 3: Oxide Semiconductors for Novel Devices (Focussed Session): Session I
DS 3.14: Vortrag
Montag, 12. März 2018, 13:00–13:15, E 020
Surface hole accumulation layer in NiO created by oxygen plasma treatment — •Melanie Budde1, Carsten Tschammer1, Theresa Berthold2, Marcel Himmerlich2, Stefan Krischok2, and Oliver Bierwagen1 — 1Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany. — 2Institut für Physik und Institut für Mikro- und Nanotechnologien MacroNano, Technische Universität Ilmenau, PF 100565, 98684 Ilmenau, Germany.
Nickel oxide (NiO) is a transparent and semiconducting p-type oxide, which is interesting for various applications, for example photovoltaics, diodes or other electronic devices. However, our high quality NiO layers grown by plasma-assisted MBE are semi-insulating with sheet resistances above 109Ω. Doping of NiO, for example with Lithium, is known to increase its p-type bulk conductivity. In this contribution, we demonstrate the formation of a surface hole accumulation layer generated by oxygen plasma treatment and characterize its conductivity. For this purpose, MBE grown NiO layers on MgO(100) are modified by an oxygen plasma process after growth. The sheet resistance was measured by Van-der-Pauw measurements and a p-type conductivity was confirmed by Seebeck measurements. Furthermore, the results allowed to determine the approximate hole concentration. X-ray photoelectron spectroscopy (XPS) demonstrates a shift of the surface Fermi level towards the valence band maximum, corroborating the formation of a surface hole accumulation layer. The results are compared to published data on p-doped NiO.