Berlin 2018 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 7: Thin Film Properties: Structure, Morphology and Composition (XRD, TEM, XPS, SIMS, RBS, AFM, ...): Session I
DS 7.2: Vortrag
Montag, 12. März 2018, 15:15–15:30, H 2032
Revealing the Interfaces of MgO/Co/GaAs(001): A Structural and Chemical Investigation with XPS and XPD — •Karim Shamout1,2, Philipp Espeter1,2, Peter Roese1,2, Richard Hönig1,2, Ulf Berges1,2 und Carsten Westphal1,2 — 1Experimentelle Physik 1 - Technische Universität Dortmund, Otto-Hahn-Str. 4, 44221 Dortmund, Germany — 2DELTA - Technische Universit
"at Dortmund, Maria-Goeppert-Mayer-Str. 2, 44221 Dortmund, Germany
We report a synchrotron radiation based x-ray photoelectron spectroscopy (XPS) and x-ray photoelectron diffraction (XPD) study on the system MgO/Co(bcc)/GaAs(001)-c(8×2) and its interfaces. Co substitutes As at the Co/GaAs interface and forms a Co3Ga alloy in D03-structure with Ga due to interdiffusion. The GaAs surface reconstruction is lifted in favor of the newly formed alloy that serves as a template for the metastable Co(bcc) structure. No indication for Co oxidation was found at the MgO/Co interface. The MgO film grows amorphously up to a thickness of ≤ 4 ML. After 5 ML of MgO deposition, the amorphous phase crystallizes into a distorted unit cell.
Keywords: Topological insulator, MTJ, TMR, PED, XPD, XPS