Berlin 2018 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 7: Thin Film Properties: Structure, Morphology and Composition (XRD, TEM, XPS, SIMS, RBS, AFM, ...): Session I
DS 7.7: Vortrag
Montag, 12. März 2018, 16:45–17:00, H 2032
Effect of alkali post-deposition treatments on the formation of the CdS buffer layer / Cu(In,Ga)Se2 thin-film solar cell absorber interface — •Jakob Bombsch1, Enrico Avancini2, Romain Carron2, Thomas Kunze1, Evelyn Handick1, Roberto Félix1, Raul Garcia-Diez1, Yuefeng Zhang1,4, Stephan Buecheler2, Regan Wilks1,3, and Marcus Bär1,3 — 1Renewable Energy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (HZB), Berlin, Germany — 2Laboratory of Thin Films and Photovoltaics, Empa-Swiss Federal Laboratories for Materials and Science and Technology, Dübendorf, Switzerland — 3Energy Materials In-Situ Laboratory Berlin (EMIL), HZB, Berlin, Germany — 4Department of Physics, Xiamen University, Xiamen, China
Cu(In,Ga)Se2 (CIGSe) - based devices are considered to be high-efficient alternatives to silicon-wafer based solar cells. The performance of chalcopyrite-based thin-film solar cells has recently been improved by performing alkali post-deposition treatments (PDT), where the highest efficiency so far has been reached using an RbF PDT. We used soft and hard x-ray photoelectron spectroscopy to study the impact of NaF/RbF PDT on the chemical and electronic properties of low temperature processed CIGSe absorbers as a function of alkali content. Evidence for the presence of Cu(II) - scaling with RbF - is found at the absorber (surface). Further, the (wet chemically) deposited CdS buffer layers contain a significant fraction of a sulfate. Finally, in our contribution, we will present and discuss the impact of the PDT on the electronic structure of the CdS/CIGSe interface.