Berlin 2018 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 13: Poster Session I

HL 13.13: Poster

Montag, 12. März 2018, 17:30–19:30, Poster B

The influence of field effect doping on the optical properties of a MoS₂ monolayer — •Shun Okano¹, Apoorva Sharma¹, Mahfujure Rahaman¹, Akira Nishimura², Nicole Köhler³, Kenji Ikushima², and Dietrich R.T. Zahn¹ — ¹Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz — ²Department of Applied Physics, Tokyo University of Agriculture and Technology, Tokyo 184-8588, Japan — ³Zentrum für Mikrotechnologien, Chemnitz University of Technology, D-09107 Chemnitz

Since the discovery of graphene, 2D materials are in the centre of attention in the scientific community. Within the 2D material family MoS₂ possesses semiconducting properties with a band gap unlike graphene, which is a conductor. This makes MoS₂ a suitable candidate for various device applications such as transistors etc. Furthermore, K.F. Mak et al. reported a novel property of modulating the light absorption for a monolayer of MoS₂ with field effect doping [1]. However, a detailed optical spectroscopic analysis of this material is still lacking. Here we present the results obtained from microscopic imaging spectroscopic ellipsometry and a thorough analysis of the results. The study was conducted on mechanical exfoliated MoS₂ flakes stamped on highly doped p-type silicon substrate with a thermally grown 375 nm thick silicon dioxide layer. To induce field effect doping in the MoS₂, gold electrodes were patterned with e-beam lithography technique. From the results obtained the modulation of the optical properties can be correlated to the change in carrier concentration. [1] Mak,K. F.,Nature materials 12.3(2013):207-211.