Berlin 2018 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 13: Poster Session I
HL 13.5: Poster
Montag, 12. März 2018, 17:30–19:30, Poster B
Hysteresis in Graphene Nanoribbon Field-Effect Transistors — •Alexander Tries1,2,3, Nils Richter1,3, Zongping Chen2, Akimitsu Narita2, Klaus Müllen2,4, Hai I. Wang2, Mischa Bonn2, and Mathias Kläui1,3 — 1Institut für Physik, Johannes Gutenberg Universität, Mainz, Germany — 2Max Planck Institute for Polymer Research, Mainz, Germany — 3Graduate School of Excel- lence Materials Science in Mainz, Mainz, Germany — 4Institut für Physikalische Chemie, Johannes Gutenberg-Universität, Mainz, Ger- many
Hysteresis in carbon based Field-Effect Transistors (FET) such as Graphene FETs or Carbon Nanotube FETs is a known feature that impacts the device performance [1,2]. In this work, we show that also atomically perfect Graphene Nanoribbons (GNR) exhibit a hysteresis behavior while measuring transfer curves. We perform a systematic study on armchair GNRs with a width of 5 and 9 carbon atoms (aGNR5 and aGNR9) using GNR-FET devices. Temperature and gate sweep rate dependent measurements reveal charge carrier trapping as a main cause of the hysteresis. From the measurements, we are able to extract the density and energy of the trap states that result in the hysteresis[3].
[1] Kim et al., Nano Letters 3, 193-198 (2003)
[2] Singh et al., Journal of Applied Physics 122, 195305 (2017)
[3] Tries et al., Manuscript in preparation (2018)