Berlin 2018 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 13: Poster Session I

HL 13.74: Poster

Montag, 12. März 2018, 17:30–19:30, Poster B

Spacer thickness effects on the optical properties of double vertically stacked InP/AlGaInP quantum dots laser structures — •Hatam Mahmudlu, Zhihua Huang, Michael Zimmer, Stefan Hepp, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Center ScoPE and IQST, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany

Quantum dots (QDs) as gain medium for semiconductor lasers are attractive for many applications. This is due to the promising lower threshold, higher material gain and the enhanced opportunity for tuning the gain spectral width and the emission wavelength. In the present work, we investigate the effects of the spacer thickness between the double vertically stacked QD layers on the optical properties and lasing performance of the self-assembled InP/AlGaInP QD edge emitting lasers. A numerical model is developed to determine the electron and hole coupling between the QD layers. The QD lasers with varying spacer layer thicknesses were grown by metal-organic vapor-phase epitaxy (MOVPE). The optical properties are carried out by photoluminescence (PL), electroluminescence (EL), and time-resolved measurements. Meanwhile, the laser performance is compared by characterizing the optical gain, internal optical losses, threshold current, and output power, respectively. Our work provides a guideline to determine the optimized spacer layer thickness for the vertically stacked QD lasers.