Berlin 2018 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 13: Poster Session I
HL 13.79: Poster
Montag, 12. März 2018, 17:30–19:30, Poster B
Experimental studies of gain and absorption properties of passively mode-locked semiconductor lasers — •Stefan Heppe1, Christoph Weber1, Julien Javaloyes2, Andreas Klehr3, Andrea Knigge3, and Stefan Breuer1 — 1Institut für Angewandte Physik, Technische Universität Darmstadt, Schlossgartenstraße 7, 64289 Darmstadt, Germany — 2Departamendto de Fisica, Universitat de les Illes Balears, 07122 Palma de Mallorca, Spain — 3Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Passively mode-locked multi-section semiconductor lasers are attractive photonic sources for optical telecommunications, as they can generate ultrashort pulses at high repetition rates. In order to derive new laser geometries, gain and absorption properties need to be accessed. In this work, the gain and absorption spectra of a 1 mm long monolithic multi-section QW laser with a 0.1 mm long absorber section and an emission wavelength of 1070 nm are investigated in dependence on injected gain current and applied absorber reverse bias voltage, by using a Czerny-Turner spectrometer and a photon counting technique. By analyzing the modulation depth of the Fabry-Perot modes in the sub-threshold amplified spontaneous emission spectrum, the wavelength dependent gain and absorption of the laser can be determined by the differential Hakki-Paoli method proposed in [Stolarz et al., IEEE Photon. J. 3 (2011), 1067]. This method allows to measure gain and absorption properties in the processed two- or multi-section laser devices.