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HL: Fachverband Halbleiterphysik

HL 24: Poster Session II

HL 24.15: Poster

Tuesday, March 13, 2018, 18:30–20:30, Poster F

Low-Temperature Transport Measurements of Selectively-Grown Te-doped InAs Nanowires — •Patrick Liebisch, Patrick Zellekens, Pujitha Perla, Dinesh Kumar Arumugam Gurunathan, Nicholas Güsken, Mihail Ion Lepsa, Detlev Grützmacher, and Thomas Schäpers — Peter Grünberg Institute 9, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany

We investigated the transport properties of n-type InAs nanowires grown by selective-area molecular beam epitaxy. Instead of Si doping, which is known for strongly disturbing the lattice structure, we employed Te as n-type dopant. In a series of growth runs the doping concentration was varied systematically up to a value corresponding to 1· 10¹⁹ cm⁻³ in (100) GaAs. For doping a stoichiometric GaTe source was used. In order to gain information on the doping efficiency, transport experiments were performed on Nb contacted nanowires. From field effect transistor measurements using either a back gate or a top gate the carrier concentration as well as the mobility were extracted. We found that the electron concentration systematically increases with supply of Te dopants. The results of the field-effect transistors are compared to photoluminescence as well as thermoelectric measurements performed on nanowires from the same growth runs.