Berlin 2018 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 3: 2D Materials: Session I (joint session DS/CPP/HL)

Montag, 12. März 2018, 09:30–13:15, H 2032

09:30 HL 3.1 Graphene nanoribbon: electronic band structure, doping and Raman fingerprints — •Boris Senkovskiy, Dmitry Usachov, Alexander Fedorov, Gianni Profeta, Danny Haberer, Felix Fischer, and Alexander Grüneis
09:45 HL 3.2 Valley spin lifetimes reaching 100 ns in monolayer MoSe2 at room temperature — •Maximilian Heithoff, Manfred Ersfeld, Frank Volmer, Robin de Winter, Christoph Stampfer, and Bernd Beschoten
10:00 HL 3.3 Ultra-high vacuum Raman spectroscopy of Cs doped monolayer graphene — •Martin Hell, Boris Senkovskiy, Joshua Hall, Thomas Michely, and Alexander Grüneis
10:15 HL 3.4 Raman spectroscopy of misfit layer compound nanotubes from CrS2 and TaS2 — •Felix Kampmann, Dalit Stolovas, Leela S. Panchakarla, Gal Radovsky, Christian Thomsen, Reshef Tenne, and Janina Maultzsch
10:30 HL 3.5 Photoluminescence study of MoS2 monolayers integrated with photonic nanostructures — •Rajeshkumar Mupparapu, Tobias Bucher, Aleksandr Vaskin, Franz Löchner, Antony George, Katie E. Chong, Stefan Fasold, Christof Neumann, Duk-Yong Choi, Falk Eilenberger, Frank Setzpfandt, Yuri S. Kivshar, Thomas Pertsch, Andrey Turchanin, and Isabelle Staude
10:45 HL 3.6 luminescence at defects in h-BN : excitons at stacking faults and single photon emitters — •Alberto Zobelli, Romain Bourrellier, Sophie Meuret, Michele Amato, Odile Stéphan, Luiz Tizei, and Mathieu Kociak
11:00 HL 3.7 Density-functional perturbation theory for gated 2D heterostructures — •Thibault Sohier, Marco Gibertini, Nicola Marzari, Matteo Calandra, and Francesco Mauri
  11:15 15 min. break.
11:30 HL 3.8 Spectroscopic characterization of the silicene multi-layer phase on Ag(111) — •Dmytro Solonenko, Sandhya Chandola, Eugen Speiser, Norbert Esser, Dietrich R.T. Zahn, and Patrick Vogt
11:45 HL 3.9 Frictional anisotropy of MoS2 studied with molecular dynamics simulations — •Victor Claerbout, Tomas Polcar, and Paolo Nicolini
12:00 HL 3.10 Structural changes and phase stability of Ti doped MoS2 monolayers — •Andrea Silva, Tomas Polcar, Ondrej Hovorka, and Denis Kramer
12:15 HL 3.11 Resonance profiles of valley polarization in single-layer MoS2 and MoSe2 — •Hans Tornatzky, Roland Gillen, Anne-Marie Kaulitz, and Janina Maultzsch
12:30 HL 3.12 Defect mediated phase transformation of two-dimensional 2H-MoTe2 to the distorted 1T'-MoTe2 — •Tibor Lehnert, Mahdi Ghorbani-Asl, Janis Köster, Hannu-Pekka Komsa, Arkady Krasheninnikov, and Ute Kaiser
12:45 HL 3.13 Excitonic transitions in heterostructured Mo and W transition metal dichalcogenides from first principles — •Roland Gillen and Janina Maultzsch
13:00 HL 3.14 Suppression of inhomogeneous broadening of excitons and trions in encapsulated MoSe2 monolayers — •Max Waldherr, Jacob Goddard, Nils Lundt, Sefaattin Tongay, Kenji Watanabe, Takashi Taniguchi, Sven Höfling, and Christian Schneider
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