Berlin 2018 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 30: Heterostructures, interfaces, and surfaces
HL 30.1: Vortrag
Mittwoch, 14. März 2018, 15:00–15:15, EW 202
Band offset of Ga(N,As,P)/GaP heterostructures on silicon for optoelectronic integration — •Sebastian Gies1, Florian Dobener1,2, Robin C. Döring1, Sarah Karrenberg1, Khakaber Jandieri1,3, Peter Ludewig3, Kerstin Volz1, Wolfgang Stolz1,3, Sangam Chatterjee2, and Wolfram Heimbrodt1 — 1Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg, Germany — 2Institute of Experimental Physics I, Justus-Liebig-University Giessen, Germany — 3NAsPIII/V GmbH, Marburg, Germany
Nowadays, realizing laser diodes for the optoelectronic integration on silicon is a big challenge. The quaternary, direct-gap semiconductor Ga(N,As,P) is a suitable candidate for this purpose as it can be grown pseudomorphically on silicon and laser operation at low temperatures has already been demonstrated. To further optimize the Ga(N,As,P) heterostructures profound knowledge of the band offset is important. We present a thorough study of the Ga(N,As,P)/GaP band offset based on the conjunction of experiment and theory. Using PLE spectroscopy the transition energies of the Ga(N,As,P)-QW are revealed. These are modeled by a QW-calculation taking strain and the N-induced band anti-crossing into account. Therefore, it is possible to uniquely determine the band offset with very high precision.