Berlin 2018 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 30: Heterostructures, interfaces, and surfaces
HL 30.4: Vortrag
Mittwoch, 14. März 2018, 15:45–16:00, EW 202
NiSi2-Si interfaces and their role in tunneling based field-effect transistors: from the atomic structure to device characteristics — •Florian Fuchs1,2,3,4, Sibylle Gemming1,2,3, and Jörg Schuster2,4 — 1Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Dresden, Germany — 2Center for Advancing Electronics Dresden (cfaed), Dresden, Germany — 3Institute of Physics, Technische Universität Chemnitz, Chemnitz, Germany — 4Fraunhofer Institute for Electronic Nano Systems (ENAS), Chemnitz, Germany
The electron transport across metal-semiconductor interfaces is crucial for the functionality of field-effect transistors (FETs) built from such contacts. By using a multiscale simulation approach we simulate single-gate FETs and so called reconfigurable FETs, where the latter design allows switching between electron and hole conduction by applying a second gate electrode. Our simulation approach combines NEGF-DFT modeling of the contact physics and a compact model to describe the device switching.
Our transistor model consists of a silicon channel sandwiched between two NiSi2 contacts. We systematically apply strain and vary the crystal orientation. It is demonstrated that strain has, depending on the crystal orientation, a very different influence on the ratio between electron and hole current. These differences are compared with the change of the effective mass and the work function of the isolated materials. We show that the properties of the isolated materials cannot explain the discovered modification of the current alone and that the interface chemistry needs to be taken into account as well.