Berlin 2018 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 33: Poster Session III
HL 33.17: Poster
Wednesday, March 14, 2018, 17:30–19:30, Poster F
Emission and Disorder Properties of Quaternary GaInAsBi Semiconductor Alloys — •Julian Veletas1, Thilo Hepp2, Lukas Nattermann2, Kerstin Volz2, and Sangam Chatterjee1 — 1I. Physikalisches Institut, Justus-Liebig-Universität Giessen, D-35392 Giessen, Germany — 2Faculty of Physics and Materials Science Center, Philipps-Universität Marburg, D-35032 Marburg, Germany
Dilute bismuth-containing semiconductor alloys such as Ga(As,Bi) are attracting significant attention due to their promising characteristics in near- and mid-infrared laser applications. The incorporation of bismuth leads to a strong reduction of the bandgap commonly described by an anti-crossing model of the Bi-level with the valence bands of the host material. Consequently, the band gap narrows and the separation ΔSO between the valence band edge and the split-off band increases. If ΔSO surpasses Egap, this leads to a suppression of non-radiative Auger recombination and, thus an enhanced performance of future devices. For example, ΔSO surpasses the bandgap energy Egap for more than 4% bismuth incorporation in (Ga,In)(As,Bi) alloys with In concentrations of about 50%. Here, we study a series of (Ga,In)(As,Bi)/(Ga,In)As/InP epilayers grown by metal-organic vapor-phase epitaxy. Modulation spectroscopy is applied to identify the optical transitions in the quaternary alloy. Comparing the results with temperature-dependent photoluminescence data measurements reveals only a small Stokes Shift and very little disorder signatures.