Berlin 2018 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 33: Poster Session III

Mittwoch, 14. März 2018, 17:30–19:30, Poster F

17:30 HL 33.1 Investigation of the effects of Mg-doping on the structural and electrical properties of(In,Ga)N/GaN superlattices — •Erdi Kuşdemir, Caroline Chèze, and Raffaella Calarco
17:30 HL 33.2 Band offset at the Ga(N,As,P)/GaP Heterointerface — •Florian Dobener, Sebastian Gies, Robin C. Döring, Kahkaber Jandieri, Peter Ludewig, Kerstin Volz, Wolfgang Stolz, Wolfram Heimbrodt, and Sangam Chatterjee
17:30 HL 33.3 Characterization of electro-chemical treated GaN-Nanowires — •René Couturier, Jan Philipps, Pascal Hille, Jörg Schörmann, Martin Eickhoff, Sangam Chatterjee, and Detlev Hofmann
17:30 HL 33.4 Raman spectrosopic characterization of GaN grown by high-temperature vapor phase epitaxy — •Christian Röder, Mykhailo Barchuk, Tom Schneider, Gleb Lukin, Friederike Zimmermann, and Jens Kortus
17:30 HL 33.5 Cathodoluminescence characterization of stacking faults in GaN — •Anja Ipsen, Matthias Hocker, Ingo Tischer, Tobias Meisch, Ferdinand Scholz, and Klaus Thonke
17:30 HL 33.6 Polarisation resolved PL-studies of thin AlBGaN-layers — •Natja Steiger, Sebastian Bauer, Markéta Zíková, Oliver Rettig, Anja Ipsen, Yueliang Li, Johannes Biskupek, Ute Kaiser, Ferdinand Scholz, and Klaus Thonke
17:30 HL 33.7 Determination of polarization fields in group III-nitride heterostructures by capacitance-voltage measurements — •Marcel Schilling, Norman Susilo, Luca Sulmoni, Martin Guttmann, Tim Wernicke, and Michael Kneissl
17:30 HL 33.8 Optical properties of metamorphic semipolar group III-nitride quantum well structures — •Daniel Schmid, Philipp Henning, Philipp Horenburg, Fedor Alexej Ketzer, Heiko Bremers, Uwe Rossow, Florian Tendille, Philippe De Mierry, Philippe Vennéguès, Jesús Zúñiga-Pérez, and Andreas Hangleiter
17:30 HL 33.9 Transport properties and structural characteristics of thin AlGaN/(AlN)/GaN heterostructures and their built-in 2D electron gases — •Dennis Mauch, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
17:30 HL 33.10 Investigation of the optical polarization of AlGaN multiple quantum wells using photoluminescence spectroscopy — •Bettina Neuschulz, Christoph Reich, Johannes Enslin, Baran Avinc, Frank Mehnke, Norman Susilo, Christian Kuhn, Tim Wernicke, and Michael Kneissl
17:30 HL 33.11 Optical and structural properties of latticed matched AlInN/GaN heterostructures — •Savutjan Sidik, Philipp Horenburg, Fedor Alexej Ketzer, Philipp Henning, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
17:30 HL 33.12 Structural and opto-electrical investigation of InGaN/GaN nanoLED arrays — •Jan Gülink, Hendrik Spende, Hutomo Suryo Wasisto, and Andreas Waag
17:30 HL 33.13 Dose and bias dependend cathodoluminescence efficiency of InGaN/GaN MQWs — •Hendrik Spende, Johannes Ledig, Christoph Margenfeld, Angelina Vogt, Sönke Fündling, Hergo-Heinrich Wehmann, Tobias Voss, and Andreas Waag
17:30 HL 33.14 Effect of AlGaN quantum well barrier composition on electro-optical properties of 270 nm light emitting diodes — •Jakob Höpfner, Martin Guttmann, Christoph Reich, Luca Sulmoni, Christian Kuhn, Pascal Röder, Tim Wernicke, and Michael Kneissl
17:30 HL 33.15 Sub 240 nm UVC LEDs featuring low contact resistance V-based electrodes on n-Al0.9Ga0.1N — •Luca Sulmoni, Frank Mehnke, Martin Guttmann, Christian Kuhn, Tim Wernicke, and Michael Kneissl
17:30 HL 33.16 Instability of the Sb vacancy in GaSb — •Natalie Segercrantz, Jonatan Slotte, Filip Tuomisto, Kenichiro Mizohata, and Jyrki Räisänen
17:30 HL 33.17 Emission and Disorder Properties of Quaternary GaInAsBi Semiconductor Alloys — •Julian Veletas, Thilo Hepp, Lukas Nattermann, Kerstin Volz, and Sangam Chatterjee
17:30 HL 33.18 Single Quantum Dot with Microlens and 3D-Printed Microobjective as Integrated Bright Single-Photon Source — •Jan Hausen, Sarah Fischbach, Timo Gissibl, Simon Ristok, Ksenia Weber, Simon Thiele, Tobias Heindel, Sven Rodt, Alois Herkommer, Harald Giessen, and Stephan Reitzenstein
17:30 HL 33.19 A first-principles investigation of the cubic ternary AlxB1-xBi alloys for infrared optical devices — •BELABBAS Mawloud, arbouche omar, benallou yacine, and bentayeb abdelkader
17:30 HL 33.20 Subsecond nuclear spin dynamics in n-doped GaAs — •Pavel Sokolov, Mikhail Petrov, Kirill Kavokin, Maria Kuznetsova, Sergey Verbin, Dmitri Yakovlev, and Manfred Bayer
17:30 HL 33.21 In-situ atomic layer deposition of high-k dielectrics on MBE-grown GaAs — •Soraya Karimzadah, Torsten Rieger, Nils von den Driesch, Lidai Kibkalo, Gregor Mussler, Detlev Grützmacher, and Mihail Ion Lepsa
17:30 HL 33.22 LH-HH Splitting in Ga(As,Bi) Semiconductor Alloys — •Frederik Otto, Julian Veletas, Lukas Nattermann, Kerstin Volz, and Sangam Chatterjee
17:30 HL 33.23 Inverted HEMT structure with electric field induced 2DEG — •Ismail Bölükbasi, Julian Ritzmann, Andreas D. Wieck, and Arne Ludwig
17:30 HL 33.24 Formation and characterization of shallow junction in GaAs made by ion implantation and ms-range flash lamp annealing — •juanmei duan and mao wang
17:30 HL 33.25 Rotational twins in III-V/Si(111) virtual substrates and their impact on subsequent III-V nanowire growth — •Matthias Steidl, Christian Koppka, Lars Winterfeld, Marsel Karmo, Katharina Peh, Oliver Supplie, Peter Kleinschmidt, Erich Runge, and Thomas Hannappel
17:30 HL 33.26 A series of "fractional" peaks in multiple paramagnetic resonance Raman scattering by (Cd,Mn)Te quantum wellsAlexei Koudinov, Alexander Knapp, Grzegorz Karczewski, •Sebastian Elsässer, and Jean Geurts
17:30 HL 33.27 Optical and magnetic studies of MBE-grown ferromagnetic CrSe and CrS layers in zincblende structure — •Johannes Röder, Richard T Moug, Kevin A Prior, and Wolfram Heimbrodt
17:30 HL 33.28 Towards electrostatically defined Quantum Dots in ZnSe — •Christian Julien Kamphausen, Arne Hollmann, Felix Hartz, Lars Reiner Schreiber, Johanna Janßen, Torsten Rieger, and Alexander Pawlis
17:30 HL 33.29 Optical spectroscopy on single semiconducting hetero dot-in-rod nanostructures: A comparison of type-I (CdSe/CdS) and type-II (ZnSe/CdS) systems — •Hans Werners, Sven Lohmann, Alexandra Hinsch, Christian Strelow, Tobias Kipp, and Alf Mews
17:30 HL 33.30 Transparent UV-active solar cells based on NiO/ZnO heterostructures: Supression of interface recombination currents — •Robert Karsthof, Holger von Wenckstern, and Marius Grundmann
17:30 HL 33.31 Towards transparent and flexible photovoltaic devices: optimized growth parameters of NiO/ZnO-based UV solar cells in superstrate configuration — •Fabian Schöppach, Robert Karsthof, Holger von Wenckstern, and Marius Grundmann
17:30 HL 33.32 CVD-growth and characterization of crystalline zinc oxide layers and nanowires — •Florian Huber, Anouk Puchinger, Waleed Ahmad, Manfred Madel, Sebastian Bauer, Raphael Müller, and Klaus Thonke
17:30 HL 33.33 Optical Characterization of iron-doped ZnO — •Sebastian Bauer, Florian Huber, Benjamin Neuschl, Matthias Schreck, and Klaus Thonke
17:30 HL 33.34 Raman spectroscopy of the copper oxide phases Cu4O3 and CuO: A first principles studyMarcel Giar, Markus Heinemann, and •Christian Heiliger
17:30 HL 33.35 H2S-sensing in the sub-ppm region with a ZnO nanowire ChemFET — •Angelika Kaiser, Florian Huber, Yujia Liu, Klaus Kolb, Manfred Madel, and Klaus Thonke
17:30 HL 33.36 Molecular Dynamics Simulation of the Oxidation Process of thin Silicon Nanowires — •Georg Heinze, Florian Fuchs, Sibylle Gemming, and Jörg Schuster
17:30 HL 33.37 Irradiation Effects on β-Ga2O3 Single Crystal: Vacancy vs. Optical Properties — •Chaoming Liu, Yidan Wei, Mao Wang, Yonder Berencén, Jianqun Yang, Xingji Li, and Shengqiang Zhou
17:30 HL 33.38 The Effect of Oxygen Vacancies on the Creation and Migration of Ti Interstitials in r-TiO2 — •Julian Gaberle and Alexander Shluger
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