Berlin 2018 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 33: Poster Session III
HL 33.5: Poster
Mittwoch, 14. März 2018, 17:30–19:30, Poster F
Cathodoluminescence characterization of stacking faults in GaN — •Anja Ipsen1, Matthias Hocker1, Ingo Tischer1,3, Tobias Meisch2, Ferdinand Scholz2, and Klaus Thonke1 — 1Institute of Quantum Matter, Semiconductor Physics Group, Ulm University, Germany — 2Institute of Optoelectronics, Ulm University, Germany — 3Richter Lighting Technologies GmbH, Heubach, Germany
Semipolar GaN samples, heteroepitaxially grown by metal organic vapor phase epitaxy on pre-structured sapphire substrates, are possible substrates for efficient optoelectronic devices. Due to the sophisticated growth mode on pre-structured sapphire substrates, defects in the epitaxial GaN layer are formed. These include basal plane stacking faults in various types, such as I1, I2 and terminating prismatic dislocations. Mostly, these defects are created at an early stage of growth, but also they form during coalescence.
In this study we present spatially and spectrally resolved low-temperature cathodoluminescence (SEM-CL) investigations from a semipolar coalesced (1011) GaN sample, grown on a pre-structured r-plane sapphire substrate. This sample shows complex luminescence signatures from several types of crystal defects.