Berlin 2018 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 33: Poster Session III
HL 33.33: Poster
Mittwoch, 14. März 2018, 17:30–19:30, Poster F
Optical Characterization of iron-doped ZnO — •Sebastian Bauer1, Florian Huber1, Benjamin Neuschl1, Matthias Schreck2, and Klaus Thonke1 — 1Institute of Quantum Matter, Semiconductor Physics Group, University Ulm, Germany — 2Institute of Physics, University Augsburg, Germany
Iron is a pertinent impurity even in high-quality II-VI-semiconductor materials. In ZnO, iron on a Zn lattice site acts as a deep donor and can not be used to compensate excess carriers. However, ZnO:Fe is an interesting candidate for the realization of ferromagnetic semiconductors for spintronics applications.
In this study we present results on the preparation of iron containing ZnO layers grown by chemical vapour deposition. Iron has been incorporated into high-quality crystalline wurtzite ZnO layers both by ion implantation and by a CVD-based seed growth technique adding iron(II) acetate as a precursor. Optical Raman spectroscopy, photoluminescence, and magneto-optical photoluminescence investigations on the iron atom and its optical band at 1.78 eV are presented. This band emerges for Fe3+ from the spin-forbidden electric-dipole transition from the excited state 4T1(G) to the ground state 6A1(S) transition.