Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 33: Poster Session III

HL 33.36: Poster

Wednesday, March 14, 2018, 17:30–19:30, Poster F

Molecular Dynamics Simulation of the Oxidation Process of thin Silicon Nanowires — •Georg Heinze^1,2, Florian Fuchs^1,2,3,4, Sibylle Gemming^2,3,4, and Jörg Schuster^2,4 — ¹Institute of Physics, Technische Universität Chemnitz, Chemnitz, Germany — ²Fraunhofer Institute for Electronic Nano Systems (ENAS), Chemnitz, Germany — ³Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Dresden, Germany — ⁴Center for Advancing Electronics Dresden (cfaed), Dresden, Germany

Silicon nanowires (SiNWs) are promising building blocks for the development of small nanoelectronic devices, such as ultra-scaled field-effect transistors or sensors. The oxidation of the wires has a large impact on their electronic properties. With shrinking device sizes an atomistic modelling of the oxidation process has become increasingly important.

Using molecular dynamics with a reactive force field potential we analyse the beginning of the oxidation process of thin SiNWs. Wires of variing diameters with the orientations <100> and <110> are examined regarding the speed of the oxidation at different temperatures. We will show how the mass density, the stochiometry and the mechanical strain evolve during the oxidation process. The observation of multiple different subphases during the oxidation is one exemplary finding.