Berlin 2018 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 35: Focussed Session: Metasurfaces II
HL 35.1: Vortrag
Donnerstag, 15. März 2018, 09:30–09:45, EW 201
Mie-resonant all-dielectric metasurfaces with tailored positional disorder — •Dennis Arslan1, Aso Rahimzadegan2, Stefan Fasold1, Matthias Falkner1, Carsten Rockstuhl2, Thomas Pertsch1, and Isabelle Staude1 — 1Friedrich Schiller University Jena, 07745 Jena, Germany — 2Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany
Optical metasurfaces typically consist of subwavelength-sized scattering particles placed deterministically on top of a flat surface. The tuning of the metasurface's structural parameters allows for a fine control over the modulation of the wavefront, polarization, and spectrum of a given incident light field.
So far, most of the realized metasurfaces were based on a periodic arrangement of the scattering particles, as the introduction of disorder in the particle position, shape, or orientation inevitably leads to an increase of incoherent scattering and thus to a deterioration of the metasurface's optical properties. More recently, however, it was recognized that the controlled introduction of disorder can, for example, decrease unwanted anisotropy in the optical response and enhance the channel capacity of wavefront-shaping metasurfaces.
In this study, we investigate disordered silicon metasurfaces exhibiting electric and magnetic dipolar Mie-type resonances. We systematically investigate how the introduction of different types of positional disorder influences the phase and intensity transmitted by these metasurfaces, showing that disorder can serve as a new degree of freedom in the design of wavefront-shaping devices.