Berlin 2018 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 39: Group IV (other than C): Si/Ge/SiC
HL 39.2: Vortrag
Donnerstag, 15. März 2018, 11:15–11:30, EW 015
Towards room-temperature extended infrared Si-based photoresponse: A case study of Te-hyperdoped Si — •Mao Wang1,2, Yonder Berencén1, Slawomir Prucnal1, Eric García-Hemme3, René Hübner1, Ye Yuan1,2, Chi Xu1,2, Lars Rebohle1, Roman Böttger1, René Heller1, Harald Schneider1, Wolfgang Skorupa1, Manfred Helm1,2, and Shengqiang Zhou1 — 1Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstr. 400, 01328 Dresden, Germany — 2Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstr. 400, 01328 Dresden, Germany — 3Univ. Complutense de Madrid, Departamento de Física Aplicada III (Electricidad y Electrónica), 28040 Madrid, Spain
Presently,room-temperature broadband Si-based photodetectors are required for Si photonic systems.Here,we demonstrate room-temperature sub-band gap photoresponse of photodiodes based on Si hyperdoped with Te.The epitaxially recrystallized Te-hyperdoped Si layers are developed by ion implantation combined with pulsed laser melting and incorporate Te concentrations beyond the solid solubility limit.An insulator-to-metal transition driven by increasing Te concentration accompanied with a band gap renormalization is observed.The optical absorptance is found to increase monotonically with increasing Te concentration and extends well into the mid- and far- infrared regions.This work contributes to establish room temperature Si-based broadband infrared photonic system.