Berlin 2018 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 39: Group IV (other than C): Si/Ge/SiC
HL 39.8: Vortrag
Donnerstag, 15. März 2018, 12:45–13:00, EW 015
High-resolution patterning of germanium for nanoelectronics applications — Anushka S. Gangnaik1, Muhammad Bilal Khan2, Shima J. Ghamsari2, Lars Rebohle2, Artur Erbe2, Justin D. Holmes1, and •Yordan M. Georgiev2 — 1Materials Chemistry and Analysis Group, School of Chemistry and Tyndall National Institute, University College Cork, Cork, Ireland and AMBER@CRANN, Trinity College Dublin, Dublin 2, Ireland — 2Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstrasse 400, 01328 Dresden, Germany
Ge is among the most attractive alternative channel materials for the next-generation nanoelectronics. However, Ge patterning with electron beam lithography (EBL) using the negative resist HSQ is challenging. The complex native oxide GeOx is soluble in the HSQ aqueous developers. As a result, lift-off of sub-20 nm features written by EBL occurs during development. In the presentation, it will be shown that this issue can be solved by: (i) removal of GeOx and passivation of Ge surface prior to HSQ deposition or (ii) application of a buffer layer between GeOx and HSQ. Arrays of sub-20 nm HSQ lines were successfully fabricated on Ge with both approaches. Moreover, a significantly simplified process for removal of GeOx and passivation of Ge surface will also be presented, which allows patterning of 6-7 nm Ge NWs, the smallest Ge nanostructures reported to date.
Finally, different applications of the above mentioned patterning processes will be discussed.