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HL: Fachverband Halbleiterphysik
HL 50: HL Poster IV
HL 50.10: Poster
Thursday, March 15, 2018, 19:00–21:00, Poster B
Defect-affected Current in Silicon Carbide: Towards Photoelectric Spin Readout — •Michael Hollenbach1, Christian Kasper1, Dimitrij Poprygin1, Andreas Sperlich1, Makino Takahiro2, Takeshi Ohshima2, Georgy V. Astakhov1, and Vladimir Dyakonov1,3 — 1Experimental Physics VI, Julius Maximilian University of Würzburg, 97074 Würzburg — 2National Institutes for Quantum and Radiological Science and Technology (QST, formerly Japan Atomic Energy Agency), Takasaki, Japan — 3Bavarian Center for Applied Energy Research (ZAE Bayern), 97074 Würzburg
Silicon carbide (SiC) is a extremely versatile wide bandgap semiconductor for high-power and high-temperature electronics and is envisioned to be employed in solid-state quantum information systems. At present, the optical readout of the atomic-scale defects, localized within the bandgap, is typically based on confocal mircroscopy. In this study, we intend to introduce an alternative detection method, allowing the direct light induced photoelectric readout of the silicon defects (VSi) in SiC.
Furthermore, of key intertest is the electrical characterization of 4H-SiC diodes with varying spatial distribution of Si-vacancies, introduced by electron and neutron irradiation. By analyzing current-voltage-characteristics as well as optically and electrically detected magnetic resonance (ODMR, EDMR) of active VSi centers, we determine an irradiation/voltage threshold to optimize diodes with suitable quantity of VSi for magnetic field sensing applications.