Berlin 2018 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 50: HL Poster IV

HL 50.43: Poster

Donnerstag, 15. März 2018, 19:00–21:00, Poster B

Investigation of Silicon Nanocrystals in Silicon-Rich Silicon Oxide using Electron Nanodiffraction in STEM — •Hendrik Voigt, Tobias Meyer, and Michael Seibt — IV. Physikalisches Institut der Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen

Silicon as the most prominent element in semiconductor physics shows interesting behaviour in low-dimensional systems. Nanocrystalline Silicon (nc-Si) particles exhibit photoluminescence at room temperature which is of great interest for future applications in light-emission techniques. Different methods have been utilized to achieve the temperature driven phase transition of silicon rich silicon oxide into stable silicon dioxide and nc-Si, one of which is laser irradiation allowing for spatially confined formation of nc-Si [1].

Lamellas of such laser irradiated samples are prepared by focused ion beam and subsequently, to investigate the properties of the nc-Si after phase transition, Electron Nanodiffraction in a Scanning Transmission Electron Microscope (STEM) is used. A diffraction map is recorded and Fluctuation Electron Microscopy is utilized to further characterize the distribution and size of the nanoparticles.

[1] Nan Wang, et al., Journal of Alloys and Compounds 707 (2017) 227-232