Berlin 2018 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 50: HL Poster IV

HL 50.50: Poster

Donnerstag, 15. März 2018, 19:00–21:00, Poster B

Charge Carrier Dynamic and Disorder in (Ga,In)As/GaAs/Ga(As,Sb) heterostructures — •Luise Rost, Sarah Karrenberg, Sebastian Gies, Christian Fuchs, Wolfgang Stolz, and Wolfram Heimbrodt — Department of Physics and Materials Science Center, Philipps- Universität Marburg, Renthof 5, 35032 Marburg, Germany

The (Ga,In)As/GaAs/Ga(As,Sb) material system is used for lasers operating over a wide spectral range in the infrared. To further optimize the design of such heterostructures, it is important to have deep understanding of the influence of the interface morphology and the charge carrier dynamic through the interface. Here we present a thorough analysis of the optical properties of (Ga,In)As/GaAs/Ga(As,Sb) type-II heterostructures by means of temperature-dependent and time resolved photoluminescence spectroscopy. We were able to determine die influence of growth interruption on the disorder in our samples to further optimize growth condition. Additionally, we introduced monolayers of GaP on different positions in our heterostructure to vary the quantum confinement and the electronic structure. Furthermore, we analyzed the decay dynamics of charge-transfer excitons in the different samples to specify correlation between interface morphology and charge carrier dynamics.