Berlin 2018 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 55: Quantum dots and wires: Preparation and characterization

HL 55.1: Vortrag

Freitag, 16. März 2018, 09:30–09:45, A 151

MOVPE grown InGaAs Metamorphic Buffers for InAs Quantum Dots in the Telecom C-Band — •Robert Sittig, Matthias Paul, Fabian Olbrich, Susanne Schreier, Jonatan Höschele, Jan Kettler, Simone Luca Portalupi, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart

For the application of semiconductor quantum dots (QDs) as non-classical light sources in communication networks, single-photon emission at 1.55 µm, corresponding to the glass fiber and atmospheric transmission window known as the telecom C-band, is vital. While the desired QD emission is achievable in the InAs/InP-system, the InP substrate quality and cost as well as the absence of an efficient binary distributed Bragg reflector structure prevents an application in the industrial scale. The starting point is our success in showing single-photon emission at 1.55 µm with resolution-limited linewidths and low fine-structure splitting from InAs QDs grown on an InGaAs metamorphic buffer (MMB). Nevertheless, the MMB quality can still be improved for the integration of the QDs in photonic nanostructures. With the goal to decrease the layer thickness and increase the interface/surface quality, different MMB-designs are studied via AFM, photoluminescence spectroscopy and X-ray diffractometry. The influence of varied grading profiles, annealing steps and total thickness on the formation of dislocations, lattice relaxation and surface texture is discussed.

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