Berlin 2018 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 55: Quantum dots and wires: Preparation and characterization

HL 55.8: Vortrag

Freitag, 16. März 2018, 11:30–11:45, A 151

Epitaxial Growth and Characterization of low-density InGaAs Quantum Dots for Single-Photon Emission at 1300 nm — •Jan Große, Nicole Srocka, Tobias Heindel, and Stephan Reitzenstein — Technische Universität Berlin, Institute for Solid State Physics, Hardenbergstraße 36, 10623 Berlin, Germany

Quantum dots are widely known as promising sources for single photons, which in turn enables a large variety of photonic applications from quantum cryptography to quantum computing. In(Ga)As/GaAs quantum dots grown by metal organic chemical vapour deposition (MOCVD) have been proven to emit single photons over a widely tuneable spectral range. Moreover they allow for a relatively easy monolithic integration in photonic cavities using lattice matched AlGaAs/GaAs DBR mirrors. Here we tackle the challenge to grow InGaAs quantum dots for single-photon emission at the telecom O-Band around 1300 nm. The spectral shift of the quantum dot emission wavelength is achieved by introducing a strain reducing InGaAs layer [1] with an indium content of approximately 25 % immediately after the growth of the quantum dot layer, tailored to yield a dot density of about 5 × 107 cm−2. We present micro-photoluminescence and atomic force measurements for the characterization of the quantum dots. Moreover, we show deterministic device integration and discuss preliminary results of optical characterization measurements.

Bloch, J. et al. Appl. Phys. Lett. 75, 2199 (1999).

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