Berlin 2018 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 6: Photovoltaics I
HL 6.6: Vortrag
Montag, 12. März 2018, 10:45–11:00, EW 203
CZTSe solar cells prepared by co-evaporation of Cu-Sn/CZTSe/ZnSe/CZTSe layer stacks — •Lwitiko Mwakyusa1,3, Markus Neuwirth1, Ulrich Paetzold3, Bryce Richards2,3, Heinz Kalt1, and Michael Hetterich2 — 1Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe — 2Light Technology Institute, (KIT), 76131 Karlsruhe — 3Institute of Microstructure Technology, (KIT), 76344 Karlsruhe
CZTSe solar cells are a promising alternative for CIGS- and CdTe-based technologies because they only comprise non-toxic and earth-abundant elements. However, the main concern of this approach is the low conversion efficiency compared to CIGS and CdTe. Essentially, CZTSe device performance is limited by a high open-circuit voltage (Voc) deficit and a low fill factor (FF). It is often assumed that this is related to a high recombination rate at the heterojunction and Mo/CZTSe interface. It is has been proven that, the reaction of Mo and CZTSe promotes the formation of a thicker MoSe2 layer as well as unwanted phases and defects at the interface. The latter could harm solar cell performance, especially Voc, series resistance (Rs) and FF. To suppress this challenge, alloyed precursors with a configuration of Mo/Cu-Sn/CZTSe/ZnSe/CZTSe are employed in this work and compared to single-layered co-evaporated CZTSe precursors with respect to material growth and device performance. The presence of an alloyed Cu-Sn seed layer prevents earlier interaction of the CZTSe absorber with the Mo back-contact. In addition the influence of annealing of each stacked layer on the growth and device performance is examined.