Berlin 2018 – wissenschaftliches Programm
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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur
KFM 13: Diamond I
KFM 13.6: Vortrag
Mittwoch, 14. März 2018, 11:50–12:10, E 020
Electrical characterization of diamond-based Schottky-diodes for high power electronics — •Lucas Pinti1, Philipp Reinke1, Fouad Benkhelifa1, Lutz Kirste1, Christian Giese1, Tobias Erlbacher2, Andreas Schletz2, Volker Cimalla1, Christoph E. Nebel1, Oliver Ambacher3, and Verena Zuerbig1 — 1Fraunhofer IAF, Freiburg, Germany — 2Fraunhofer IISB, Erlangen, Germany — 3INATECH, Freiburg, Germany
In power electronics, the enhancement of energy efficiency and reduction of module volume are major points for innovative voltage converter system. Switching and conduction losses in common Si-based power electronic devices and the consequential need of cooling systems to guarantee reliable operation of such systems reduce the overall efficiency and therefore represent additional costs. Diamond as a new wide-band-gap semiconductor material is a promising extension in terms of voltage and heat dissipation in comparison to Si-based power electronic devices. With its outstanding physical properties like high breakdown electric field, high carrier mobilities and high thermal conductivity diamond has the best requirements to enable semiconductor power devices with low losses and minimized cooling efforts. In our presentation, we will report on the electrical characterization of vertical single-crystalline diamond Schottky diodes, which are fabricated by a CVD process. Temperature dependent IV characteristics as well as a detailed analysis of important device parameters like blocking voltage and specific on-resistance of the diodes will be given and compared to state of the art power diodes suitable for power converter modules.