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Berlin 2018 – wissenschaftliches Programm

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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur

KFM 2: Ferroelectric Domain Walls I (joint session KFM/TT)

KFM 2.1: Hauptvortrag

Montag, 12. März 2018, 09:30–10:00, EMH 225

Atomic-resolution imaging of electronic inversion layers at ferroelectric domain wallsJulia Mundy1, •J. Schaab2, Y. Kumagai2, A. Cano3, M. Stengel4,5, I. Kung6, D. Gottlob7, H. Doganay7, M. Holtz8, R. Held8, Z. Yan2,9, E. Bourret9, C. Schneider7, D. Schlom8, D. Muller8, R. Ramesh9,10, N. Spaldin2, and D. Meier2,111Harvard University — 2ETH Zurich — 3Université de Bordeaux, ICMCB — 4ICREA Institució Catalana de Recerca i Estudis Avançat — 5Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB — 6TU Berlin — 7Forschungszentrum Julich — 8Cornell University — 9Lawrence Berkeley National Laboratory — 10UC Berkeley — 11Norwegian University of Science and Technology

Ferroelectric domain walls hold great promise as functional two-dimensional materials because of their unusual electronic properties. Particularly intriguing are the so-called charged walls where a polarity mismatch causes local, diverging electrostatic potentials requiring charge compensation and hence a change in the electronic structure. These walls can exhibit significantly enhanced conductivity and serve as a circuit path. Here we use atomic-resolution STEM-EELS to directly probe the charge transfer at these charged ferroelectric domain walls in ErMnO3. Our direct quantification of the charge transfer to the domain boundary gives insight into the the formation and eventual activation of an inversion layer that acts as the channel for the charge transport. The findings provide new insight into the domain-wall physics in ferroelectrics.

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