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Berlin 2018 – wissenschaftliches Programm

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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur

KFM 23: Lithography III: Lithography and Structuring (joint session KFM/DS)

KFM 23.6: Vortrag

Donnerstag, 15. März 2018, 11:50–12:10, EMH 025

A high contrast multilayer process for electron beam lithography using different developers — •Philip Trempler1, Frank Heyroth2, Matthias Schirmer3, Christian Kaiser3, Tobias Mai3, and Georg Schmidt1, 21Institut für Physik, Martin-Luther Universität Halle-Wittenberg, 06099 Halle (Saale), Germany — 2Interdisziplinäres Zentrum für Materialwissenschaften, Martin-Luther Universität Halle-Wittenberg 06099 Halle (Saale), Germany — 3ALLRESIST GmbH, Am Biotop 14, 15344 Strausberg, Germany

We have developed a new multilayer resist system for the fabrication of three-dimensional nanostructures in a one-step electron beam exposure. The multilayer resist consists of three layers with different sensitivity and different process chemistry. The sensitivity of the three layers to different respective developers allows a very large controllable undercut in the middle layer. The low sensitivity bottom layer can be patterned in high detail almost independent from the pattern exposed in the two layers on top. At acceleration voltage of 30 kV the resist is ideally suited for the fabrication of for example T-gate structures by lift-off in a high reliability process with a very large process window.

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