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O: Fachverband Oberflächenphysik
O 29: Metallic nanowires on semiconductor surfaces
O 29.10: Vortrag
Dienstag, 13. März 2018, 12:45–13:00, MA 144
A new atomic structure model for rare earth silicide nanowires on Si(001) — •Stephan Appelfeller1, Jonas Heggemann2,3, Tore Niermann2, Michael Lehmann2, and Mario Dähne1 — 1Institut für Festköperphysik, Technische Universität Berlin, Germany — 2Institut für Optik und Atomare Physik, Technische Universität Berlin, Germany — 3Fachbereich Physik, Universität Osnabrück, Germany
Rare earth silicide nanowires on Si(001) are well known since 20 years. Soon after their discovery, their formation was explained by an atomic structure based on anisotropically strained hexagonal rare earth disilicide [1]. This univeral structure model was confirmed by scanning tunneling microscopy, with which only the surface of the nanowires is accessable.
Here, high-resolution transmission electron microscopy was utilized to analyze the cross-sections of Tb silicide nanowires with atomic resolution. For this purpose, the nanowires were passivated by an amorphous Si layer, which does not influence their inner structure [2]. As expected, hexagonal structural motives are found, but their orientation contradicts the accepted structure model of the nanowires. Thus, a new atomic structure model was developed based on these data as well as previous findings by scanning tunneling microscopy and low energy electron diffraction.
This work was supported by the DFG (FOR1700, E2).
[1] Y. Chen et. al, Appl. Phys. Lett. 76, 4004 (2000).
[2] S. Appelfeller et. al, Appl. Phys. Lett. 108, 013109 (2016).