Berlin 2018 – scientific programme
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O: Fachverband Oberflächenphysik
O 29: Metallic nanowires on semiconductor surfaces
O 29.6: Talk
Tuesday, March 13, 2018, 11:45–12:00, MA 144
Quasi-ballistic transport through surface states of Ge(001)-c(4x2) demonstrated by two-probe STM measurements and multi-terminal fist-principles simulations — •Pedro Brandimarte1, Marek Kolmer2, Hiroyo Kawai3, Thomas Frederiksen1,4, Aran García-Lekue1,4, Nicolas Lorente5, Mads Engelund5, Rafal Zuzak2, Szymon Godlewski2, Christian Joachim6, Marek Szymonski2, and Daniel Sánchez-Portal1,5 — 1DIPC, Spain — 2NANOSAM-UNIWERSYTET JAGIELLO, Poland — 3IMRE, Singapore — 4IKERBASQUE, Spain — 5CFM CSIC-UPV/EHU, Spain — 6CNRS, France
Dangling-bond (DB) dimer wires on both Si and Ge(001):H substrates were predicted to be robust against electron doping and capable of sustaining ballistic transport [1]. The ability to fabricate high-quality DB-dimer wires on Ge(001):H was demonstrated and their transport properties were measured in atomic level using a two-probe scanning tunneling microscope (STM) setup [2].
We present a joint theoretical and experimental study of the electronic transport through DB-dimer wires on bare Ge(001) surfaces. First-principles calculations (DFT+NEGF [3]) of a four-terminal setup were carried out to simulate the two-tip experiment. Our results confirm the capability of the DB-dimer wires to sustain quasi-ballistic transport, and opens the possibility to their use as interconnects for atomic-scale devices fabricated on these surfaces.
[1] M.Engelund et al. JPCC 120, 20303 (2016). [2] M.Kolmer et al. JPCM 29, 444004 (2017). [3] N.Papior et al. CPC 212, 8 (2017).