Berlin 2018 –
wissenschaftliches Programm
O 33: Semiconductor substrates: Structure, epitaxy and growth
Dienstag, 13. März 2018, 14:00–15:15, MA 005
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14:00 |
O 33.1 |
Growth, structure and morphology of tin deposited on Silicon and germanium surfaces — •Nicolas Braud, Thomas Schmidt, and Jens Falta
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14:15 |
O 33.2 |
Study of As-modified Si(100) surfaces for III-V-on-Si heteroepitaxy in CVD ambient — •Agnieszka Paszuk, Oliver Supplie, Manali Nandy, Anja Dobrich, Peter Kleinschmidt, and Thomas Hannappel
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14:30 |
O 33.3 |
Molecular dynamics simulations of vapor-deposited amorphous selenium — •Julian Schneider, Amirhossein Goldan, and Anders Blom
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14:45 |
O 33.4 |
Delta-doped phosphorus layers in silicon — •Ann-Julie Utne Holt, Sanjoy Mahatha, Raluca-Maria Stan, Frode Sneve Strand, Thomas Nyborg, Alex Schenk, Simon Phillip Cooil, Marco Bianchi, Philip Hofmann, Justin Wells, and Jill Miwa
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15:00 |
O 33.5 |
In situ study of AlxGa1-xP nucleation on As-modified Si(100) 2° surfaces — •Manali Nandy, Agnieszka Paszuk, Anja Dobrich, Oliver Supplie, Peter Kleinschmidt, and Thomas Hannappel
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