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Berlin 2018 – scientific programme

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O: Fachverband Oberflächenphysik

O 33: Semiconductor substrates: Structure, epitaxy and growth

O 33.4: Talk

Tuesday, March 13, 2018, 14:45–15:00, MA 005

Delta-doped phosphorus layers in silicon — •Ann-Julie Utne Holt1, Sanjoy Mahatha1, Raluca-Maria Stan1, Frode Sneve Strand2, Thomas Nyborg2, Alex Schenk2, Simon Phillip Cooil3, Marco Bianchi1, Philip Hofmann1, Justin Wells2, and Jill Miwa11Department of Physics and Astronomy, Interdisciplinary Nanoscience Center (iNANO), University of Aarhus, 8000 Aarhus C, Denmark — 2Department of Physics, Norwegian University of Science and Technology (NTNU), N-7491 Trondheim, Norway — 3Institute of Mathematics and Physics, Aberystwyth University, Aberystwyth SY23 3BZ, UK

A δ-layer is a buried, high-density, doping profile in a semiconductor host. Such a doping profile may give rise to the formation of a two-dimensional electron gas (2DEG) in the dopant layer [1]. Phosphorus δ-layers in silicon combined with scanning tunneling microscope lithography have led to the fabrication of functional atomic scale devices [2]. By creating such δ-layers, varying in thickness from an atomically sharp doping profile to a 4.0 nm thick dopant layer, the effect of quantum confinement on the electronic structure of a induced 2DEG was studied using angle-resolved photoemission spectroscopy. The location of theoretically predicted, but experimentally undiscovered, quantum well states known as the Δ -manifold was revealed, validating density functional theory calculations developed for describing these δ-layer systems. Verification of these states contributes to the development of accurate models describing the electronic behavior of δ-layer derived devices.

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