Berlin 2018 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 36: 2D materials beyond graphene: TMDCs, silicene and relatives I
O 36.4: Vortrag
Dienstag, 13. März 2018, 14:45–15:00, MA 043
Engineering Kondo State in Two-Dimensional Semiconducting Phosphorene — •Rohit Babar1 and Mukul Kabir1,2 — 1Department of Physics, Indian Institute of Science Education and Research, Pune, India — 2Center for Energy Science, Indian Institute of Science Education and Research, Pune, India
Correlated interaction between dilute localized electrons with the itinerant conduction electrons gives rise to Kondo effect below sufficiently low temperature. Beyond the conventional impurity in a metal systems, many artificial Kondo systems have been discovered in the last two decades. In sharp contrast to the artificial Kondo systems, we report an intrinsic, robust and high-temperature Kondo state in two-dimensional semiconducting phosphorene based on density functional theory calculations at different levels of approximations. While absorbed at a thermodynamically stable lattice defect, Cr impurity triggers an electronic phase transition in phosphorene to provide conduction electrons, which strongly interact with the localized moment generated at the Cr site. This manifests in an intrinsic Kondo state, where a multi-stage quenching of the impurity moment occurs in the temperature range 40-200 K. Further, along with a significantly small extension of Kondo cloud, the predicted Kondo state is shown to be robust under uniaxial strain and layer thickness, which greatly simplifies its future experimental realization. Our findings will broaden the current understanding of Kondo physics in two-dimensional materials.