Berlin 2018 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 41: Poster: Metal Substrates - Structure, Epitaxy, Growth and Adsorption
O 41.2: Poster
Dienstag, 13. März 2018, 18:15–20:30, Poster A
spontaneous formation of a superconductor-topological insulator HfTe3 - HfTe5 layered heterostructure — •yuqi wang1,2, xu wu1,2, ye-liang wang1,4, shao yan1, tao lei3, jia-ou wang3, shi-yu zhu1, haiming guo1, ling-xiao zhao1, simin nie1, hong-ming weng1,4, kurash ibrahim3, xi dai1,4, zhong fang1,4, and hong-jun gao1,4 — 1Institute of Physics, Chinese Academy of Sciences, Beijing, P. R. China — 2Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, Germany — 3Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, P. R. China — 4Collaborative Innovation Center of Quantum Matter, Beijing, P. R. China
Recently, 2D materials and their heterostructures have shown unusual properties. In particular, HfTe5 films and bulk HfTe3 are reported to be 2D large-gap topological insulators (TIs) and superconductors (SCs), respectively. Such a heterostructure made of an s-wave SC and a TI is potentially suitable for studying amazing phenomena including Majorana Fermions. Here we report fabricating a SC-TI heterostructure with a layered configuration of HfTe3/HfTe5 [1]. The structure of the heterostructure has been determined by STM and XPS. STS measurements reveal a band-gap as large as 60 meV in the HfTe5 film and a SC spectrum in HfTe3/HfTe5 film. Our current method of making desired heterostructures is based on a spontaneous formation process using surface reactions. This method may provide new routes for the development of other functional heterostructures and nanodevices. References 1. Y. Wang et al., Adv. Mater, 28, 5013 (2016).