Berlin 2018 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 67: Electronic structure of surfaces: Spectroscopy, surface states III
O 67.3: Vortrag
Mittwoch, 14. März 2018, 15:45–16:00, MA 042
Electronic structure of LAO/STO thin films: artificial control of the quantum well states or enhanced polaronic tail? — •Marco Caputo1, Alessio Filippetti2, Margherita Boselli3, Alla Chikina1, Hugo Dil4, Claudia Cancellieri5, Stefano Gariglio3, Jean-Marc Triscone3, and Vladimir N. Strocov1 — 1Swiss Light Source, Paul Scherrer Institute, CH-5232 Villigen-PSI, Switzerland — 2CNR-IOM, Istituto Officina dei Materiali, Cittadella Universitaria, Cagliari, Monserrato 09042-I, Italy. 7 — 3DPMC, University of Geneva, 24 Quai Ernest Ansermet, 1211 Geneva, Switzerland — 4Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland — 5EMPA, Swiss Federal Laboratories for Materials Science & Technology, Ueberlandstrasse 129, CH-8600 Duebendorf, Switzerland
Transition Metal Oxides (TMO) represent an ideal platform to exploit exotic phenomena in solid state physics. Conductivity and superconductivity in the 2D Electron System (2DES) at the LAO3/STO3 (LAO/STO) interface is one of them.
The 2DES sits on the STO part of the interface, in a potential well created by band bending. Reducing the thickness of the hosting STO material can provide a platform for new exotic phenomena, like quantum well states.
In this work we analyze the electronic structure of a LAO/STO interface, where the STO side was a thin layer of few unit cells grown on a LAO layer deposited on a STO substrate.