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Berlin 2018 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 91: 2D materials beyond graphene: TMDCs, silicene and relatives III

O 91.1: Vortrag

Donnerstag, 15. März 2018, 10:30–10:45, MA 043

Structure and Electronic Properties of Intrinsic Defects in Single Layer Molybdenum Disulfide on Au(111) — •Christian Lotze, Nils Krane, Asieh Yousofnejad, Gael Reecht, and Katharina J. Franke — Fachbereich Physik, Freie Universität Berlin, Germany

Transition metal dichalcogenides (TMDCs) are two-dimensional materials with a natural band gap, making them interesting as sensors, solar cells or LEDs. Single layer molybdenum disulfide (MoS2) is especially interesting, because it provides a direct band gap [1] and a strong spin-splitting of the valence and conduction band.

Here we grow MoS2 epitaxially on a Au(111) surface as described in [2]. Using combined scanning tunneling/atomic force microscopy (STM/AFM) at low temperatures, we observe different kinds of defects. Particularly prominent are defects, which appear in sizes of several nanometers. NC-AFM reveals an atomically intact surface layer, suggesting that the origin of the defect is located at the gold interface. At these sites, the band gap of MoS2 is significantly modified, pointing towards quasi-freestanding MoS2 on a metal substrate [3]. Moreover, we identify single point defects like Mo and S vacancies by STM/AFM and tunneling spectroscopy. The latter two exhibit localized in-gap defect states, which agree well with simulations from density functional theory [4].

[1] Mak et al., PRL 105, (2010) 136805; [2] Sorensen, et al., ACS Nano 8, (2014) 6788; [3] Krane, et al., Nano Lett. 16, (2016) 5163; [4] González, al., Nanotechnology, 27 (2016), 105702

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