Berlin 2018 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 101: Correlated Electrons: Other Materials
TT 101.1: Vortrag
Donnerstag, 15. März 2018, 15:30–15:45, HFT-FT 101
Proximity-induced spin-valley polarization in silicene or germanene on F-doped WS2 — •Udo Schwingenschlögl, Shahid Sattar, and Nirpendra Singh — King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia
Silicene and germanene are key materials for the field of valleytronics. However, interaction with the substrate, which is necessary to support the electronically active medium, becomes a major obstacle. In the present work, we propose a substrate (F-doped WS2) that avoids detrimental effects and at the same time induces the required valley polarization, so that no further steps are needed for this purpose[1]. The behavior is explained by proximity effects on silicene or germanene, as demonstrated by first-principles calculations. Broken inversion symmetry due to the presence of WS2 opens a substantial band gap in silicene or germanene. F doping of WS2 results in spin polarization, which, in conjunction with proximity-enhanced spin-orbit coupling, creates sizable spin-valley polarization.
Phys. Rev. B 94, 205415 (2016).