Berlin 2018 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 43: Graphene: Electronic Properties, Structure and Substrate Interaction II (joint session O/TT)

TT 43.10: Vortrag

Dienstag, 13. März 2018, 13:00–13:15, MA 043

Extremely flat band in bilayer graphene on silicon carbide — •Dmitry Marchenko¹, Daniil Evtushinsky¹, Vagelis Golias¹, Andrei Varykhalov¹, Thomas Seyller², and Oliver Rader¹ — ¹Helmholtz-Zentrum Berlin fur Materialien und Energie GmbH — ²Technische Universitat Chemnitz

In the present work we discover by angle-resolved photoemission an extremely flat band forming a strong 2D-extended van Hove singularity near the K point in bilayer graphene on SiC. We present a novel model for flat band formation in bilayer graphene and other bipartite lattices. Our finding implies that we can expect strong propensity towards a superconducting transition with high critical temperature.