Berlin 2018 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
TT: Fachverband Tiefe Temperaturen
TT 43: Graphene: Electronic Properties, Structure and Substrate Interaction II (joint session O/TT)
TT 43.6: Vortrag
Dienstag, 13. März 2018, 12:00–12:15, MA 043
Structural study of the graphene/n-Ge(110) interface for nanoelectronic applications — •Julia Tesch1, Fabian Paschke1, Marko Wietstruk2, Stefan Böttcher2, Mikhail Fonin1, Elena Voloshina3, and Yuriy Dedkov3,1 — 1Fachbereich Physik, Universität Konstanz, 78457 Konstanz, Germany — 2SPECS Surface Nano Analysis GmbH, 13355 Berlin, Germany — 3Department of Physics, Shanghai University, 200444 Shanghai, China
While graphene nanoelectronics show great promise to replace silicon-based technology in the future[1], the fabrication of graphene-based electronic units is accompanied by several drawbacks such as organic residue or metal contamination, defects and other transfer related issues. An alternative route to designing nanoscale device components is presented by epitaxial graphene growth directly on semiconducting substrates.
In order to shed light on the interactions at the graphene-semiconductor interface, we present local and macroscopic studies of graphene/Ge(110) regarding both structural and electronic properties investigated by means of low temperature STM/STS[2] as well as ARPES. The arrangement of dopants is discussed with respect to corrugation, Fermi velocity renormalization and doping level of graphene. Due to only a weak interaction between graphene and Ge(110) substrate, the characteristic linear dispersion of graphene is preserved, making it a viable candidate for device applications.
[1] Westervelt, Science 320, 324 (2008). [2] Tesch et al., Carbon 122, 428 (2017).