Berlin 2018 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 46: Poster Session: Graphene (joint session O/TT)
TT 46.11: Poster
Dienstag, 13. März 2018, 18:15–20:30, Poster A
Influence of atomic-scale dopants on the transport properties of graphene on SiC — •Anna Sinterhauf1,2, Philip Willke1, Georg Traeger1, Davood Momeni Pakdehi3, Klaus Pierz3, Hans Werner Schumacher3, Hans Hofsäss4, and Martin Wenderoth1,2 — 1IV. Physikalisches Institut, Universität Göttingen, Germany — 2International Center for Advanced Studies of Energy Conversion (ICASEC), Universität Göttingen, Germany — 3Physikalisch-Technische Bundesanstalt Braunschweig, Germany — 4II. Physikalisches Institut, Universität Göttingen, Germany
Tailoring the electronic structure of graphene by substitutional doping often additionally changes its transport properties. In order to study the impact of atomic-scale dopants on electron transport, graphene samples were prepared by polymer-assisted sublimation growth (PASG) [1] and doped with nitrogen atoms by low energy ion beam implantation [2]. Using highly resolved scanning tunneling microscopy and potentiometry, we determined the dopant density as well as the local sheet resistance on the nanometer scale. Moreover, the defect resistance at substrate steps was evaluated. Subsequently, the mobility and the mean free path length were estimated and compared for pristine and nitrogen doped PASG graphene. Furthermore, we were able to quantify the impact of nitrogen dopants on the charge transport, which introduce an additional short-range scattering process along with long-range Coulomb scattering. [1] Kruskopf et al., 2D Materials 3, 041002, 2016 [2] Willke et al., Nano Lett. 15(8), 2015