Berlin 2018 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 46: Poster Session: Graphene (joint session O/TT)
TT 46.12: Poster
Dienstag, 13. März 2018, 18:15–20:30, Poster A
Variation of the local transport properties of epitaxial graphene caused by the stacking order of 6H-SiC — •Georg Traeger1, Anna Sinterhauf1,2, Davood Momeni Pakdehi3, Philip Schädlich5, Florian Speck5, Johannes Aprojanz4,5, Thomas Seyller5, Hans-Werner Schumacher3, Christoph Tegenkamp4,5, Klaus Pierz3, and Martin Wenderoth1,2 — 1IV. Physical Institute, University of Göttingen, Göttingen, Germany — 2Internatonal Center for Advanced Studies of Energy Conversion (ICASEC), University of Göttingen, Göttingen, Germany — 3Physikalisch-Technische Bundesanstalt, Braunschweig, Germany — 4Institute for Solid State Physics, University of Hannover, Hannoner, Germany — 5Institute of Physics, Chemnitz, Chemnitz, Germany
We present a scanning tunneling potentiometer (STP) study on graphene on silicon carbide (6H-SiC(0001)) grown by polymer assisted sublimation growth (PASG). The high homogeneity of the buffer layer, grown by PASG allows for an investigation of the substrate graphene interaction. [1] Highly resolved STP measurements revealed two distinct sheet resistances, which occur in a characteristic pattern. We identified this pattern with the 6H stacking sequence of the substrate and assigned the graphene terraces to different substrate terminations. Park et al. found that these terminations have different polarization charges [2]. According to this findings, we attribute the termination with the highest polarization charge to the graphene sheet with the highest conductivity.
[1] Pakdehi et al., Submitted [2] Park et al., Phys. Rev. B, 1995