Berlin 2018 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 55: Multiferroic Oxide Thin Films and Heterostructures I (joint session KFM/TT/MA)

TT 55.9: Vortrag

Mittwoch, 14. März 2018, 12:00–12:15, EMH 225

Investigation of a-domain formation in Pb(Zr,Ti)O3 thin films — •Niranjan Ramakrishnegowda^1,2, Yeseul Yun^1,2, Daesung Park^1,2, and Akash Bhatnagar^1,2 — ¹Zentrum für Innovationskompetenz SiLi-nano, Halle (Saale), Germany — ²Martin Luther Universität Halle-Wittenberg, Halle (Saale), Germany

Strain engineering of ferroelectric/ferroelastic domains is an active area of research nowadays, as it provides an exotic pathway to tune the resultant properties of ferroic materials. Since the domains can be also ferroelastic, the extent of strain, applied via the substrate-film lattice parameter mismatch, can be used to define the domain width, orientation and position. However, the persistence of the strain across the thickness of the film is largely affected by growth related process parameters.

In the case of Pb(Zr,Ti)O₃, one of the most widely investigated ferroelectric, recent studies involving asymmetric substrates allowed to fine tune the nucleation of a-domains, and the associated domain wall thickness. The proposed prerequisite condition of a_film< a_substrate < c_film was satisfied. In this work we attempt to further analyze this condition by growing PZT films on symmetric SrTiO₃ substrates. The role of depolarization field was evaluated by the use of conductive oxide layers sandwiched between the film and the substrate. The usually neglected contribution of target density and purity will be also elaborated.