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TT: Fachverband Tiefe Temperaturen
TT 66: Spintronics (joint session MA/TT)
TT 66.4: Talk
Wednesday, March 14, 2018, 15:45–16:00, EB 202
Defect induced magnetism --- A framework for all-semiconductor spintronics — •Lukas Botsch1, Israel Lorite1, Yogesh Kumar1, Pablo Esquinazi1, Tom Michalsky1, Joachim Zajadacz2, and Klaus Zimmer2 — 1Felix-Bloch-Institute for Solid State Physics, Leipzig University, Germany — 2Leibniz-Institut für Oberflächenmodifizierung e. V., Leipzig, Germany
Combining the so-called defect induced magnetism (DIM) phenomenon --- inducing magnetic order in nominally non-magnetic materials through defects --- with acceptor/donor doping in semiconducting materials opens a whole new degree of engineering freedom to design spintronic devices. The DIM phenomenon is known to exist in a variety of materials such as different oxides, nitrides and carbon based materials. We demonstrate the versatility of this framework by showing its application in an all-semiconductor spin-filter device, prepared at the surface of a ZnO microwire by low energy ion implantation. This device is based on a spin-blockade effect that arises at the interface between highly doped magnetic and lightly doped non-magnetic regions at the surface of the wire. The device can be tuned to operate in a large range of temperatures and shows strong spin filtering.