Berlin 2018 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 66: Spintronics (joint session MA/TT)

TT 66.5: Vortrag

Mittwoch, 14. März 2018, 16:00–16:15, EB 202

p-type co-doping effect in III-Mn-V dilute ferromagnetic semiconductors — •Chi Xu^{1, 2}, Ye Yuan^{1, 2}, Mao Wang^{1, 2}, Roman Böttger¹, Manfred Helm^{1, 2}, and Shengqiang Zhou¹ — ¹Helmholtz-Zentrum Dresden Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden, Germany — ²Technische Universität Dresden, D-01062 Dresden, Germany

III-Mn-V based diluted magnetic semiconductors offer an opportunity to explore various aspects of carrier transport in the presence of cooperative phenomena. In this work, we demonstrate the efficiency of an alternative approach to control the carrier state through involving one magnetic impurity Mn and one electrically active dopant Zn. Mn-doped and Zn co-doped Ga-V films have been prepared by combining ion implantation and pulsed laser melting, followed by a systematic investigation on the magnetic and transport properties of (Ga,Mn)P by varying Mn concentration as well as by Zn co-doping. Changes of electrical, magnetic and magneto-transport behavior of the investigated Ga-Mn-V films were observed after co-doping with Zn. The changes are caused by interstitial Mn atoms which are transferred from substitutional sites or formation of Mn-Zn dimers.