München 2019 – wissenschaftliches Programm
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AKBP: Arbeitskreis Beschleunigerphysik
AKBP 7: Hadron Accelerators and Colliders
AKBP 7.5: Vortrag
Dienstag, 19. März 2019, 15:00–15:15, HS 7
Characterisation of the Radiation Hardness of Cryogenic Bypass Diodes for the HL-LHC Inner Triplet Circuit — •Andreas Will1,2, Axel Bernhard1, Giorgio D’Angelo2, Reiner Denz2, Dietrich Hagedorn2, Arnaud Monteuuis2, Anke-Susanne Mueller1, Felix Rodriguez Mateos2, Krzysztof Stachon2, and Daniel Wollmann2 — 1KIT, Karlsruhe, Germany — 2CERN, Geneva, Switzerland
One option for the powering layout of the new HL-LHC Nb3Sn triplet circuits is the use of cryogenic bypass diodes, where the diodes are located inside an extension to the magnet cryostat, operated in superfluid helium and exposed to radiation. Therefore, the radiation hardness of different type of bypass diodes has been tested at low temperatures in CERN*s CHARM irradiation facility during the operational year 2018. The forward bias characteristics, the turn on voltage, the reverse blocking voltage and the capacitance of each diode were measured weekly at 4.2 K and 77 K, respectively, as a function of the accumulated radiation dose. The diodes were submitted to a dose close to 12 kGy and a 1 MeV equivalent neutron fluence of 2.2· 1014 n/cm2. After the end of the irradiation campaign the annealing behaviour of the diodes was tested by increasing the temperature slowly to 300 K. This contribution describes the experimental setup, the measurement procedure and discusses the results of the measurements.