München 2019 – wissenschaftliches Programm

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K: Fachverband Kurzzeit- und angewandte Laserphysik

K 2: Light and Radiation Sources, EUV and X-Ray Sources

K 2.2: Vortrag

Dienstag, 19. März 2019, 11:20–11:40, HS 3

Surface-emitting semiconductor light sources with in-plane micro-mirrors — •Bruno Jentzsch1,2, Alvaro Gomez-Iglesias2, Alexander Tonkikh2, and Bernd Witzigmann11Universität Kassel, Kassel, Germany — 2OSRAM Opto Semiconductors, Regensburg, Germany

A novel concept of surface-emitting semiconductor light source based on in-plane amplified stimulated emission is presented. The concept is beneficial for applications where high output power and highly directional emission characteristic are required. The proposed concept is completely based on wafer-level processing and offers a substantial technology simplification over conventional LDs and SLEDs.

We apply monolithically integrated micro-mirrors to deflect in-plane gain-guided optical modes normal to the chip surface. The surface above the out-coupling structures is covered with an optical coating. Depending on the waveguide, chip, and optical coating geometry the concept can be used to either fabricate a surface-emitting LD or a surface-emitting SLED. The samples were grown by metal-organic vapor phase epitaxy with several InGaAs/GaAs QWs emitting at a peak wavelength of 950 nm. Promising performance characteristics of investigated IR surface-emitting light sources are achieved. For instance, the spectral FWHM is > 10 nm in the superluminescence regime and < 1 nm in the lasing regime. The output power in pulsed operation at room temperature higher than 3.4 W is recorded at an operating current density of 6 kA/cm2. The highest measured WPE is larger than 44 % and the smallest fast-axis FWHM is 30 °.

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