München 2019 – wissenschaftliches Programm
K 3.4: Vortrag
Dienstag, 19. März 2019, 15:00–15:20, HS 3
Diode-pumped Tb3+-doped laser with direct emission in the visible range — •Elena Castellano-Hernández and Christian Kränkel — Zentrum für Lasermaterialien, Leibniz-Institut für Kristallzüchtung (IKZ), Berlin, Germany
We present, to the best of our knowledge, the first diode pumped laser operation of Tb3+-doped materials. Under pumping with an InGaN diode laser and without any nonlinear conversion steps, a Tb3+:LiLuF4 laser operates at a wavelength of 542.5 nm in the green. Under 200 mW of diode pumping at 488.3 nm, we obtained 44 mW of green output with a slope efficiency with respect to the absorbed pump power of 52 %. Initial results were also obtained at 587.5 nm in the yellow.