München 2019 – wissenschaftliches Programm
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P: Fachverband Plasmaphysik
P 6: Low Pressure Plasmas I
P 6.1: Hauptvortrag
Montag, 18. März 2019, 16:30–17:00, HS 20
Plasmas in leading-edge semiconductor device fabrication: Importance and analysis — •Sven Zimmermann1,2, Micha Haase1, Norbert Lang3, Henrik Zimmermann3, Jürgen Röpcke3, Stefan Schulz1,2, and Thomas Otto1,2 — 1Chemnitz University of Technology, 09126 Chemnitz, Germany — 2Fraunhofer ENAS Chemnitz, 09126 Chemnitz, Germany — 3INP Greifswald, 17489, Greifswald, Germany
The further scaling of device dimension in modern semiconductor technologies results in an increasing complexity of plasma processes. Especially patterning processes in the state of the art 22 nm-technology-node become more and more the limiting factor for device performance, reliability and power consumption. Such processes are often multistep recipes with an intermediate change in chemical plasma composition and additional purges. The optimization of such single-step-chains on the empirical way fails due to the unmanageable couple of adjustable parameters and their dependencies. Additional novel materials show often more complex chemical interactions with plasma species.
The talk exemplifies typical challenges for plasma processes in state of the art integration schemes, down to 22 nm, with respect to transistor functionality and performance of the interconnect system. The plasmas were analyzed with several electric and spectroscopic methods and correlations with process results, e.g. material degradations and geometrical aspects, will be illustrated. Finally, drawbacks and furthers requirements of modern plasma diagnostic methods will be given.