Regensburg 2019 – wissenschaftliches Programm
CPP 14.2: Vortrag
Montag, 1. April 2019, 15:15–15:30, H31
When the model description hampers the parameter extraction for organic thin-film transistors — Markus Krammer1, James Borchert2, Andreas Petritz3, Gerburg Schider3, Esther Karner-Petritz3, Barbara Stadlober3, Hagen Klauk2, and •Karin Zojer1 — 1Institute of Solid State Physics, NAWI Graz, Graz University of Technology, Graz, Austria — 2Max Planck Institute for Solid State Research, Stuttgart, Germany — 3Joanneum Research Materials, Weiz, Austria
When transistor parameters, like charge mobility or contact resistances, are determined from the electrical characteristics, their values are not unambiguous, but rather depend on the extraction technique and on the underlying transistor model. We propose a technique to establish whether the ambiguity arises already from the chosen transitor model. This two-step technique analyzes the electrical measure- ments of a series of TFTs with different channel lengths. The first step extracts the parameters for each individual transistor. The second step checks whether the channel length-dependence of the extracted parameters is consistent with the model. We demonstrate the technique for a range of organic TFTs that differ in the semiconductor, the injecting contacts, and the geometry. Independent of the transistor set, state-of-the-art transistor models fail to reproduce the correct channel length-dependence. Our technique suggests that transistor models require improvements in terms of carrier density dependence of the mobility and the consideration of uncompensated charges in the transistor channel.